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TO-220 8A Triac
TM841M-L, TM861M-L
s Features
qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=8A qGate trigger Current: IGT=30mA max (MODE , ,
External Dimensions
(Unit: mm)
16.7max 3.00.2 8.80.2 10.4max
5.0max 2.1max
)
3.750.1
a b
0.15 1.35
12.0 min
4.0 max
+0.2 0.65 -0.1 0.1 2.5
(1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G)
0.1 2.5
0.2 1.7
a. Part Number b. Lot Number
(1) (2) (3)
Weight: Approx. 2.6g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate voltage Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature
Symbol
VDRM IT(RMS) ITSM VGM IGM PGM PG(AV) Tj Tstg
Ratings
TM841M-L 400 8.0 80 10 2 5 0.5 - 40 to +125 - 40 to +125 TM861M-L 600
Unit
V A A V A W W C C
Conditions
Conduction angle 360, Tc=108C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125C
sElectrical Characteristics
Parameter
Off-state current On-state voltage
(Tj=25C, unless otherwise specified)
Symbol
IDRM VTM
Ratings
min typ 0.3 max 2.0 0.1 1.6 0.8 2.0 2.0 2.0 30 30 30 0.7 0.8 0.9 8 10 12 30 0.2 12 1.8
Unit
mA V
Conditions
VD=VDRM, RGK= , Tj=125C
VD=VDRM, RGK= , Tj=25C Pulse test, ITM=10A
T2 , G V VD=6V, RL=10, TC=25C T2 , G T2 , G T2 , G
+ + - - - - +
+
+ -
Gate trigger voltage
VGT
- + + -
T2 , G mA VD=6V, RL=10, TC=25C T2 , G T2 , G T2 , G V mA
C/W
Gate trigger current
IGT
- +
Gate non-trigger voltage Holding current Thermal resistance
VGD IH Rth
VD=1/2xVDRM, Tj=125C VD=6V Junction to case
36
TM841M-L, TM861M-L
vT - iT Characteristics (max)
100 50
Tj=25C Tj=125C
ITSM Ratings
100
Gate Characteristics
Tj= -20C Tj= -40C
Surge on-state current ITSM (A)
iT (A)
80
vGF (V)
10 ms 1cycle
1 0 0
8
On-state current
10 5
60
20 40 60 80
Gate voltage
50Hz
Gate trigger current IGT (mA)
6 4
40
1 0.5 0.3 1.0
20
2 0 1 5 10 50 100 0
See graph at the upper right
0 2.0 3.0 3.6
1
2
Tj=25C
Initial junction temperature Tj=125C ITSM
Gate trigger voltage VGT (V)
12 10
3 2
PG
M
W =5
3
On-state voltage
vT ( V )
Number of cycle
Gate current
iGF (A)
IT(RMS) - PT(AV) Characteristics
12
IT(RMS) - Tc Ratings
150
IT(RMS) - Ta Ratings
150
Full-cycle sinewave Conduction angle : 360 Self-supporting Natural cooling No wind
IH temperature Characteristics
(Typical)
20
(VD=30V)
Average on-state power PT(AV) (W)
Full-cycle sinewave Conduction angle :360
Ambient temperature Ta (C)
10
125
125 100
Case temperature TC (C)
8
100
6
75
75
Holding current IH (mA)
10 (T2 - T1 )
- + + -
4 2 0
50
50 25 0
( T2 - T1 )
25
Full-cycle sinewave Conduction angle :360
0
2
4
6
8
10
0
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
3.0
0 -40
0
25
50
75
100
125
RMS on-state current IT(RMS) (A)
RMS on-state current IT(RMS) (A)
RMS on-state current IT(RMS) (A)
Junction temperature Tj (C)
Pulse trigger temperature Characteristics
(MODE - )
30
vgt (Typical)
(MODE - )
30 30
(MODE - )
)
)
)
trigger VGT DC gateat 25C voltage
trigger VGT DC gateat 25C voltage
50%
50%
trigger VGT DC gateat 25C voltage
vgt
10
Tj= - 40C - 20C 25C 75C 125C
vgt
10
vgt
50%
tw
tw
Tj= - 40C - 20C 25C 75C 125C
10
Tj= - 40C - 20C 25C 75C 125C
tw
(
(
trigger vgt ( Gateand tw voltage) at Tj
trigger vgt ( Gateand tw voltage) at Tj
1
trigger vgt ( Gateand tw voltage) at Tj
(
1
1
0.1 0.5 1
10
10 2
103
10 4
0.1 0.5 1
10
10 2
103
10 4
0.1 0.5 1
10
10 2
103
10 4
Pulse width
tw (s)
Pulse width
tw (s)
Pulse width
tw (s)
Pulse trigger temperature Characteristics
(MODE - )
30
trigger IGT DC gateat 25C current
igt (Typical)
(MODE - )
30
trigger IGT DC gateat 25C current
(MODE - )
30
50%
10
Tj= - 40C - 20C 25C 75C 125C
tw
10
Tj= - 40C - 20C 25C 75C 125C
tw
50%
trigger IGT DC gateat 25C current
igt
)
)
)
igt
igt
10
Tj= - 40C - 20C 25C 75C 125C
50%
tw
(
(
trigger igt (Gateand tw current ) at Tj
trigger igt (Gateand tw current ) at Tj
1
1
trigger igt (Gateand tw current ) at Tj
(
103 10 4
1
0.1 0.5 1
10
10 2
103
10 4
0.1 0.5 1
10
10 2
0.1 0.5 1
10
10 2
103
10 4
Pulse width
tw (s)
Pulse width
tw (s)
Pulse width
tw (s)
VGT temperature characteristics
(Typical)
1.2 1.0 MODE MODE MODE
(VD=6V, RL=10)
IGT temperature characteristics
(Typical)
24
(VD=6V, RL=10)
Transient thermal resistance Characteristics
100
rth (C/W)
Gate trigger voltage VGT (V)
Gate trigger current IGT (mA)
(T2-,G- ) (T2+,G+ ) (T2+,G- )
20 MODE MODE MODE 10 (T2-, G- ) (T2+, G- ) (T2+, G+ )
Junction to operating environment
10
0.8 0.6 0.4 0.2 0 -40
Transient thermal resistance
1
Junction to case
0
25
50
75
100
125
0 -40
0
25
50
75
100
125
0.1 0.1
1
10
10 2
10 3
10 4
10 5
Junction temperature Tj (C)
Junction temperature Tj (C)
t, Time (ms)
37

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